? semiconductor components industries, llc, 2001 june, 2001 rev. 0 1 publication order number: bcx5610r1/d BCX56-10R1 preferred device npn silicon epitaxial transistor these npn silicon epitaxial transistors are designed for use in audio amplifier applications. the device is housed in the sot-89 package, which is designed for medium power surface mount applications. ? high current: 1.0 amp ? available in 7 inch/1000 unit tape and reel ? device marking: bk maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit collector-emitter voltage v ceo 80 vdc collector-base voltage v cbo 100 vdc emitter-base voltage v ebo 5 vdc collector current i c 1 adc total power dissipation @ t a = 25 c derate above 25 c p d (note 1.) (note 2.) 1.56 13 0.67 5.0 watts mw/ c watts mw/ c operating and storage temperature range t j , t stg 65 to 150 c thermal characteristics characteristic symbol max unit thermal resistance junction-to-ambient (surface mounted) r q ja (note 1.) (note 2.) 80 190 c/w maximum temperature for soldering purposes time in solder bath t l 260 10 c sec 1. fr4 @ 1.0 x 1.0 inch pad 2. fr4 @ minimum pad device package shipping ordering information sot89 case 1213 style 2 http://onsemi.com marking diagram bk y = year code m = month code bk = device code preferred devices are recommended choices for future use and best overall value. collector 2 base 1 emitter 3 medium power npn silicon high current transistor surface mount 1 2 3 bcx5610r1 sot89 1000/tape & reel ym
bcx5610r1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristics symbol min typ max unit off characteristics collector-base breakdown voltage (i c = 100 m adc, i e = 0) v (br)cbo 100 vdc collector-emitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 80 vdc emitter-base breakdown voltage (i e = 10 m adc, i c = 0) v (br)ebo 5.0 vdc collector-base cutoff current (v cb = 30 vdc, i e = 0) i cbo 100 nadc emitter-base cutoff current (v eb = 5.0 vdc, i c = 0) i ebo 10 m adc on characteristics (note 3.) dc current gain (i c = 5.0 ma, v ce = 2.0 v) (i c = 150 ma, v ce = 2.0 v) (i c = 500 ma, v ce = 2.0 v) h fe 25 63 25 160 collector-emitter saturation voltage (i c = 500 madc, i b = 50 madc) v ce(sat) 0.5 vdc base-emitter on voltage (i c = 500 madc, v ce = 2.0 vdc) v be(on) 1.0 vdc dynamic characteristics current-gain bandwidth product (i c = 10 madc, v ce = 5.0 vdc, f = 35 mhz) f t 130 mhz 3. pulse test: pulse width 300 m s, duty cycle 2.0% typical electrical characteristics h fe , dc current gain 100 10 1000 100 10 1 i c , collector current (ma) figure 1. dc current gain t j = 125 c t j = 25 c t j = -55 c 1000
bcx5610r1 http://onsemi.com 3 typical electrical characteristics i c , collector current (ma) figure 2. current-gain bandwidth product f, currentgain bandwidth product (mhz t 1000 100 10 100 10 1.0 1000 c, capacitance (pf) 80 60 40 20 10 8.0 6.0 4.0 v r , reverse voltage (volts) figure 3. capacitance 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 i c , collector current (ma) figure 4. aono voltages 1.0 0.4 0 100 1.0 0.5 500 1.0 0.8 0.6 0.4 0.2 0 i c , collector current (ma) figure 5. collector saturation region 0.05 0.1 0.2 0.5 2.0 5.0 10 20 50 v ce , collectoremitter voltage (volts) v, voltage (volts) 0.8 0.6 0.2 2.0 5.0 10 20 50 200 1.0 v be(on) @ v ce = 1.0 v v ce(sat) @ i c /i b = 10 v be(sat) @ i c /i b = 10 t j = 25 c 50 ma 100ma t j = 25 c 250ma 500ma i c = 10ma t j = 25 c c ibo c obo step 1 preheat zone 1 ramp" step 2 vent soak" step 3 heating zones 2 & 5 ramp" step 4 heating zones 3 & 6 soak" step 5 heating zones 4 & 7 spike" step 6 vent step 7 cooling 200 c 150 c 100 c 50 c time (3 to 7 minutes total) t max solder is liquid for 40 to 80 seconds (depending on mass of assembly) 205 to 219 c peak at solder joint desired curve for low mass assemblies desired curve for high mass assemblies 100 c 150 c 160 c 170 c 140 c figure 6. typical solder heating profile
bcx5610r1 http://onsemi.com 4 package dimensions sot89 (3lead) case 121302 issue c k l g h m 0.10 t s b s a m 0.10 t s b s a d e 2 pl c j a b f t seating plane notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. 1213-01 obsolete, new standard 1213-02. dim a min max min max inches 4.40 4.60 0.173 0.181 millimeters b 2.40 2.60 0.094 0.102 c 1.40 1.60 0.055 0.063 d 0.37 0.57 0.015 0.022 e 0.32 0.52 0.013 0.020 f 1.50 1.83 0.059 0.072 g 1.50 bsc 0.059 bsc h 3.00 bsc 0.118 bsc j 0.30 0.50 0.012 0.020 k 0.80 --- 0.031 --- l --- 4.25 --- 0.167 style 2: pin 1. base 2. collector 3. emitter on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bcx5610r1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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